Efforts in the Plasma Etching Thrust Area are directed at expanding both
the knowledge base and technology base for a broad spectrum of
applications, including semiconductor fabrication. Fundamental
understanding is addressed through modeling, as well as development and
implementation of in situ diagnostics. At the same time, process
development for integrated circuits processing and for novel etching
applications takes place in a variety of low-pressure, high-density etch
tools.
Our current effort is now directed at the following critical etch issues:
Semiconductor Processing:
* Fluorocarbon-based SiO2 etching - chemical characterization of gas phase
using infrared spectroscopy, endpoint detection, etch selectivity/ion
energy control at the wafer surface
* Plasma-Induced Damage - surface charging effects in device damage and
feature profile evolution, discharge modulation for reduction of
charging-induced damage, vacuum ultraviolet radiation damage
* Real-time Control of Plasma Etching - efforts includes development of
sensors (e.g., wall deposition monitor), and control strategies
Novel Plasma Etch Applications
* polymer etching, MEMS, structures for biological studies, magnetic materials
Etch Tool Development
* helicon plasma etching, magnetically enhanced inductively coupled
plasmas (ICP), large area substrates, modeling
Advanced Plasma Etch Diagnostics
* Diagnostics currently under development: Langmuir probe theory in
magnetized plasmas, infrared absorption spectroscopy, electro-optical
probe. Many more diagnostics are in frequent use
Recent collaborations with industrial partners:
* process development for polymer etching
* surface charging reduction during plasma etching
* process development for etching of magnetic materials
* chemical characterization of plasmas for fluorocarbon-based etching of SiO2
Collaborations with other laboratories:
SEMATECH, Sandia National Laboratory